IGBT - IXGJ40N60C2D1 HIPERFAST IGBTs +DIODE 600V 40A 32NS
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 375,000 Tomman
Keywords: IXGJ40N60C2D1
Detail:
Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 600V Collector-emitter saturation voltage |Ucesat|, V: 2.7V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 75A Maximum junction temperature (Tj), °C: Rise time, nS: 32 Maximum collector capacity (Cc), pF: Package: TO268(I3-PAK)